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参数资料
| 型号： | FDFMJ2P023Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.9A 6MLP |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 112 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MLP |
| 包装： | 带卷 (TR) |
August 2007
FDFMJ2P023Z
Integrated P-Channel PowerTrench ? MOSFET and Schottky Diode
–20V, –2.9A, 112m ?
tm
Features
MOSFET
Max r DS(on) = 112m ? at V GS = –4.5V, I D = –2.9A
Max r DS(on) = 160m ? at V GS = –2.5V, I D = –2.4A
Max r DS(on) = 210m ? at V GS = –1.8V, I D = –2.1A
Max r DS(on) = 300m ? at V GS = –1.5V, I D = –1.0A
Low gate charge, high power and current handline capability
HBM ESD protection level > 1.5KV typical (Note 3)
Schottky
V F < 400mV @ 100mA
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
The SC-75 MicroFET package offers exceptional thermal
performance for it’s physical size and is well suited to linear mode
applications.
Pin 1
A
S
G
TO BOTTOM
A 1
6 NC
C
D
S 2
G 3
5 A
4 S
NC
A
S
TO BOTTOM
SC-75 MicroFET
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
–20
±8
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
(Note 1a)
–2.9
–12
A
P D
T J , T STG
V RRM
I O
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1b)
1.4
0.7
–55 to +150
30
1
W
° C
V
A
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
89
182
°C/W
Package Marking and Ordering Information
Device Marking
.P23
Device
FDFMJ2P023Z
Package
SC-75 MicroFET
Reel Size
7’’
Tape Width
8 mm
Quantity
3000 units
?2007 Fairchild Semiconductor Corporation
FDFMJ2P023Z Rev.B
1
www.fairchildsemi.com
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