参数资料
型号: FDFMJ2P023Z
厂商: Fairchild Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: MOSFET P-CH 20V 2.9A 6MLP
产品变化通告: Product Discontinuation 27/Feb/2012
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 112 毫欧 @ 2.9A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 6.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 400pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-MLP
包装: 带卷 (TR)
Typical Characteristics T J = 25°C unless otherwise noted
4.5
4.0
3.5
3.0
2.5
I D = -2.9A
V DD = -3V
V DD = -5V
1000
C iss
2.0
V DD = -7V
100
C oss
1.5
1.0
0.5
f = 1MHz
V GS = 0V
C rss
0.0
0
1
2
3
4
5
10
0.1
1
10
30
10
Q g , GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
-1
30
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
10
10
10
-2
-3
-4
V DS = 0V
10
100us
10
-5
T J = 150 o C
1
1ms
10
10
10
10
10
0.1
-6
-7
-8
-9
-10
0
3
6
9
T J = 25 o C
12
15
THIS AREA IS
LIMITED BY r DS(on)
SINGLE PULSE
T J = MAX RATED
R θ JA = 182 o C/W
T A = 25 o C
0.01
0.1 1
10
10ms
100ms
1s
10s
DC
60
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
10
10
-V DS , DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe
Operating Area
1
T J = 125 o C
1
T J = 125 o C
0.1
T J = 85 o C
0.1
0.01
T J = 25 o C
0.01
1E-3
1E-4
T J = 85 o C
T J = 25 o C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-5
0
5
10
15
20
25
30
V F, FORWARD VOLTAGE(V)
Figure 11. Schottky Diode Forward Voltage
V R , REVERSE VOLTAGE (V)
Figure 12. Schottky Diode Reverse Current
?2007 Fairchild Semiconductor Corporation
FDFM2P023Z Rev.B
5
www.fairchildsemi.com
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