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| 型号： | FDFS2P106A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 3A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 714pF @ 30V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDFS2P106ADKR |
June 2001
FDFS2P106A
Integrated 60V P-Channel PowerTrench ? MOSFET and Schottky Diode
General Description
The FDFS2P106A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
? –3.0 A, –60V R DS(ON) = 110 m ? @ V GS = –10 V
R DS(ON) = 140 m ? @ V GS = –4.5 V
? V F < 0.45 V @ 1 A (T J = 125 ° C)
V F < 0.53 V @ 1 A
V F < 0.62 V @ 2 A
? Schottky and MOSFET incorporated into single
power surface mount SO-8 package
? Electrically independent Schottky and MOSFET
pinout for design flexibility
D
C
C
D
A 1
A 2
S 3
8 C
7 C
6 D
SO-8
A
S
G
G 4
5 D
Pin 1
A
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Ratings
– 60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
– 3
A
– Pulsed
– 10
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J , T STG
V RRM
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
– 55 to +150
45
° C
V
I O
Schottky Average Forward Current
(Note 1a)
1
A
Package Marking and Ordering Information
Device Marking
FDFS2P106A
Device
FDFS2P106A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2001 Fairchild Semiconductor Corporation
FDFS2P106A Rev B(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDFS2P106A_Q | 功能描述:MOSFET 60V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFS2P753AZ | 功能描述:MOSFET -30V Int P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFS2P753AZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| FDFS2P753Z | 功能描述:MOSFET -30V -3A 115 OHM PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFS6N303 | 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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