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| 型号： | FDG1024NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V SC70-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 175 毫欧 @ 1.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | FDG1024NZFSDKR |
June 20 10
FDG1024NZ
Dual N-Channel PowerTrench ? MOSFET
20 V, 1.2 A, 175 m ?
Features
Max r DS(on) = 175 m ? at V GS = 4.5 V, I D = 1.2 A
Max r DS(on) = 215 m ? at V GS = 2.5 V, I D = 1.0 A
Max r DS(on) = 270 m ? at V GS = 1.8 V, I D = 0.9 A
Max r DS(on) = 389 m ? at V GS = 1.5 V, I D = 0.8 A
HBM ESD protection level >2 kV (Note 3)
Very low level gate drive requirements allowing operation in
1.5 V circuits (V GS(th) < 1 V)
Very small package outline SC70-6
RoHS Compliant
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as a
replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with
different bias resistor values.
G2
S2
D1
D2
S1 1
G1 2
6 D1
5 G2
S1
G1
D2 3
4 S2
SC70-6
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
20
±8
Units
V
V
I D
P D
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25°C
T A = 25°C
T A = 25°C
(Note 1a)
(Note 1a)
(Note 1b)
1.2
6
0.36
0.30
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
350
415
°C/W
Package Marking and Ordering Information
Device Marking
.4 N
Device
FDG1024NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
?20 10 Fairchild Semiconductor Corporation
FDG1024NZ Rev. C
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDG311N | MOSFET N-CH 20V 1.9A SC70-6 |
| FDG312P | MOSFET P-CH 20V 1.2A SC70-6 |
| FDG313N_D87Z | MOSFET N-CH 25V 0.95A SC70-6 |
| FDG315N | MOSFET N-CH 30V 2A SC70-6 |
| FDG316P | MOSFET P-CH 30V 1.6A SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG311N | 功能描述:MOSFET SC70-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG311N | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 20V, 1.9A, SC-70 |
| FDG311N_Q | 功能描述:MOSFET SC70-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG312P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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