- 您现在的位置：买卖IC网 > Datasheet目录418 > FDG1024NZ (Fairchild Semiconductor)MOSFET N-CH DUAL 20V SC70-6 Datasheet资料下载
参数资料
| 型号： | FDG1024NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V SC70-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 175 毫欧 @ 1.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | FDG1024NZFSDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
20
14
1
±10
V
mV/°C
μ A
μ A
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
0.4
0.8
-3
1.0
V
mV/°C
V GS = 4.5 V, I D = 1.2 A
V GS = 2.5 V, I D = 1.0 A
160
185
175
215
r DS(on)
Static Drain to Source On Resistance
V GS = 1.8 V, I D = 0.9 A
V GS = 1.5 V, I D = 0.8 A
232
321
270
389
m ?
V GS = 4.5 V, I D = 1.2 A,
T J =125 °C
220
259
g FS
Forward Transconductance
V DD = 5 V, I D = 1.2 A
4
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 10 V, V GS = 0 V,
f = 1 MHz
115
25
20
4.6
150
35
25
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
3.7
10
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 10 V, I D = 1.2 A,
V GS = 4.5 V, R GEN = 6 ?
V GS = 4.5 V, V DD = 10 V,
I D = 1.2 A
1.7
11
1.5
1.8
0.3
0.4
10
19
10
2.6
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
0.3
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 0.3 A
(Note 2)
0.7
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 1.2 A, di/dt = 100 A/ μ s
10
1.9
20
10
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ JA is determined by
the user's board design.
a. 350 °C/W when mounted
on a 1 in 2 pad of 2 oz copper.
b. 415 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
?20 10 Fairchild Semiconductor Corporation
FDG1024NZ Rev. C
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDG311N | MOSFET N-CH 20V 1.9A SC70-6 |
| FDG312P | MOSFET P-CH 20V 1.2A SC70-6 |
| FDG313N_D87Z | MOSFET N-CH 25V 0.95A SC70-6 |
| FDG315N | MOSFET N-CH 30V 2A SC70-6 |
| FDG316P | MOSFET P-CH 30V 1.6A SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG311N | 功能描述:MOSFET SC70-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG311N | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 20V, 1.9A, SC-70 |
| FDG311N_Q | 功能描述:MOSFET SC70-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG312P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
发布紧急采购，3分钟左右您将得到回复。