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参数资料
| 型号： | FDFMJ2P023Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.9A 6MLP |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 112 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MLP |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = –250 μ A, V GS = 0V
I D = –250 μ A, referenced to 25°C
V DS = –16V, V GS = 0V
V GS = ±8V, V DS = 0V
–20
–13
–1
±10
V
mV /° C
μ A
μ A
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = –250 μ A
I D = –250 μ A, referenced to 25°C
–0.4
–0.7
2.3
–1.0
V
mV/°C
V GS = –4.5V, I D = –2.9A
V GS = –2.5V, I D = –2.4A
93
128
112
160
r DS(on)
Static Drain to Source On Resistance
V GS = –1.8V, I D = –2.1A
173
210
m ?
V GS = –1.5V, I D = –1.0A
V GS = –4.5V, I D = –2.9A ,T J = 125°C
217
130
300
160
g FS
Forward Transconductance
V DS = –5V, I D = –2.9A
7
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10V, V GS = 0V,
f = 1MHz
300
55
45
400
75
70
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = –10V, I D = –2.9A
V GS = –4.5V, R GEN = 6 ?
V DD = –5V, I D = –2.9A
V GS = –4.5V
5
4
23
12
4.6
0.6
1.0
10
10
37
22
6.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
–1.1
A
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = –1.1A
I F = –2.9A, di/dt = 100A/ μ s
–0.9
28
15
–1.2
45
27
V
ns
nC
?2007 Fairchild Semiconductor Corporation
FDFM2P023Z Rev.B
2
www.fairchildsemi.com
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