参数资料
型号: FDFMJ2P023Z
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET P-CH 20V 2.9A 6MLP
产品变化通告: Product Discontinuation 27/Feb/2012
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 112 毫欧 @ 2.9A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 6.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 400pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-MLP
包装: 带卷 (TR)
Typical Characteristics T J = 25°C unless otherwise noted
12
V GS = -4.5V
2.5
V GS = -1.8V
9
V GS = -3V
V GS = -2.5V
2.0
V GS = -1.5V
V GS = -2V
V GS = -2.5V
6
3
V GS = -2V
V GS = -1.8V
1.5
1.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V GS = -1.5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V GS = -3V
V GS = -4.5V
0
0.5
0
1
2
3
4
5
0
3
6
9
12
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
-I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
500
1.4
I D = -2.9A
V GS = -4.5V
400
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
I D = -2.9A
1.2
300
1.0
0.8
200
100
T J = 125 o C
T J = 25 o C
0.6
-75
-50
-25
0
25
50
75
100 125 150
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
12
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
V GS = 0V
9
6
V DD = -3V
T J = -55 o C
1
0.1
T J = 150 o C
3
T J = 25 o C
0.01
T J = 25 o C
T J = -55 o C
T J = 150 o C
0
0
1
2
3
0.001
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2007 Fairchild Semiconductor Corporation
FDFM2P023Z Rev.B
4
www.fairchildsemi.com
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