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| 型号： | FDFMA3N109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.9A MICRO2X2 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 123 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 220pF @ 15V |
| 功率 - 最大： | 650mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 其它名称： | FDFMA3N109DKR FDFMA3N109DKR-ND FDFMA3N109FSDKR |
April 200 8
Integrated N-Channel PowerTrench MOSFET and Schottky Diode
FDFMA3N109
?
tm
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
Features
MOSFET:
? 2.9 A, 30 V R DS(ON) = 123 m ? @ V GS = 4.5 V
R DS(ON) = 140 m ? @ V GS = 3.0 V
R DS(ON) = 163 m ? @ V GS = 2.5 V
Schottky:
? V F < 0.46 V @ 500mA
? Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
? HBM ESD protection level = 1.8kV typ ical (Note 3)
? RoHS Compliant
PIN 1
A NC
D
A
1
6 K
K
D
NC
2
5 G
K G S
MicroFET 2x2
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
D
3
4 S
Symbol
V DS
V GS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
30
± 12
Units
V
V
I D
Drain Current – Continuous (T C = 25°C, V GS = 4.5V)
2.9
– Continuous (T C = 25°C, V GS = 2.5V)
– Pulsed
2.7
10
A
P D
T J , T STG
V RRM
I O
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1b)
1.5
0.65
–55 to +150
28
1
W
° C
V
A
Thermal Characteristics
R θ JA Thermal Resistance, Junction-to-Ambient
(Note 1a)
83
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1b)
(Note 1c)
(Note 1d)
193
101
228
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size
Tape width
Quantity
109
FDFMA3N109
7’’
8mm
3000 units
? 200 8 Fairchild Semiconductor Corporation
FDFMA3N109 Rev B 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDFMA3N109_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA3P029Z | 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMC2P120 | 功能描述:MOSFET -20V Integr P-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFME2P823CT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDFME2P823ZT | 功能描述:MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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