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参数资料
| 型号： | FDFMA3N109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.9A MICRO2X2 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 123 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 220pF @ 15V |
| 功率 - 最大： | 650mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 其它名称： | FDFMA3N109DKR FDFMA3N109DKR-ND FDFMA3N109FSDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS Drain–Source Breakdown Voltage
V GS = 0 V, I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25°C
25
mV/°C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
V DS = 24 V,
V GS = ± 12 V,
V GS = 0 V
V DS = 0 V
1
±10
μ A
μ A
On Characteristics
V GS(th) Gate Threshold Voltage
Gate Threshold Voltage
? V GS(th)
Temperature Coefficient
? T J
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
0.4
1.0
–3
1.5
V
mV/ ° C
V GS = 4.5V, I D = 2.9A
V GS = 3.0V, I D = 2.7A
75
84
123
140
R DS(on)
Static Drain–Source
On–Resistance
V GS = 2.5V, I D = 2.5A
V GS = 4.5V, I D = 2.9A, T C = 85°C
92
95
163
166
m ?
V GS = 3.0V, I D = 2.7A, T C = 150°C
V GS = 2.5V, I D = 2.5A, T C = 150°C
138
150
203
268
Dynamic Characteristics
C iss Input Capacitance
V DS = 15 V,
V GS = 0 V,
190
220
pF
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
f = 1.0 MHz
30
20
40
30
pF
pF
R G
Gate Resistance
V GS = 0 V,
f = 1.0 MHz
4.6
?
Switching Characteristics
t d(on) Turn–On Delay Time
t r Turn–On Rise Time
t d(off)
Turn–Off Delay Time
t f
Turn–Off Fall Time
(Note 2)
V DD = 15 V,
V GS = 4.5 V,
I D = 1 A,
R GEN = 6 ?
6
8
12
2
12
16
21
4
ns
ns
ns
ns
Q g
Q gs
Total Gate Charge
Gate–Source Charge
V DS = 15 V,
V GS = 4.5 V
I D = 2.9 A,
2.4
0.35
3.0
nC
nC
Q gd
Gate–Drain Charge
0.75
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain–Sourc e Diode Forward Current
2.9
A
V SD
t rr
Q rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I S = 2.0 A
I S = 1.1 A
I F = 2.9 A,
dI F /dt = 100 A/μs
0.9
0.8
10
2
1.2
1.2
V
ns
nC
Schottky Diode Characteristics
I R Reverse Leakage
V R = 28 V
T J = 25°C
T J = 85°C
10
0.07
100
4.7
μ A
mA
V F
V F
Forward Voltage
Forward Voltage
I F = 1 A
I F = 500 mA
T J = 25°C
T J = 85°C
T J = 25°C
T J = 85°C
0.50
0.49
0.40
0.36
0.57
0.60
0.46
0.43
V
V
FDFMA3N109 Rev B 2
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