参数资料
型号: FDFMA3N109
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 30V 2.9A MICRO2X2
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: MicorFET 2x2, SC-75 Dual
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 2.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 123 毫欧 @ 2.9A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 3nC @ 4.5V
输入电容 (Ciss) @ Vds: 220pF @ 15V
功率 - 最大: 650mW
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-MicroFET(2x2)
包装: 标准包装
其它名称: FDFMA3N109DKR
FDFMA3N109DKR-ND
FDFMA3N109FSDKR
Electrical Characteristics
T A = 25°C unless otherwise noted
1. R θ JA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ JA is
Notes:
2
determined by the user's board design.
(a) MOSFET R θ JA = 83°C/W when mounted on a 1in 2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) MOSFET R θ JA = 193°C/W when mounted on a minimum pad of 2 oz copper
(c) Schottky R θ JA = 101°C/W when mounted on a 1in 2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d) Schottky R θ JA = 228°C/W when mounted on a minimum pad of 2 oz copper
a 1in pad
a 1in pad
a) 83 o C/W
when
mounted on
2
of 2 oz
copper
b) 193 o C/W
when
mounted on
a minimum
pad of
2 oz copper
c)101 o C/W
when
mounted on
2
of 2 oz
copper
b) 228 o C/W
when
mounted on
a minimum
pad of
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3 : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDFMA3N109 Rev B 2
相关PDF资料
PDF描述
FDFMJ2P023Z MOSFET P-CH 20V 2.9A 6MLP
FDFS2P106A MOSFET P-CH 60V 3A 8-SOIC
FDFS2P753Z MOSFET P-CH 30V 3A 8-SOIC
FDFS6N548 MOSFET N-CH 30V 7A 8-SOIC
FDFS6N754 MOSFET N-CH 30V 4A 8-SOIC
相关代理商/技术参数
参数描述
FDFMA3N109_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode
FDFMA3P029Z 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDFMC2P120 功能描述:MOSFET -20V Integr P-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDFME2P823CT 制造商:Fairchild Semiconductor Corporation 功能描述:
FDFME2P823ZT 功能描述:MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube