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参数资料
| 型号： | FDFMA2P859T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A MICROFET |
| 产品目录绘图： | MicroFET 2x2, SC-75 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDFMA2P859TDKR |
FDFMA2P859T
July 2009
Integrated P-Channel PowerTrench ? MOSFET and Schottky Diode
–20 V, –3.0 A, 120 m :
Features
MOSFET :
? Max r DS(on) = 120 m : at V GS = –4.5 V, I D = –3.0 A
? Max r DS(on) = 160 m : at V GS = –2.5 V, I D = –2.5 A
? Max r DS(on) = 240 m : at V GS = –1.8 V, I D = –1.0 A
Schottky:
? V F < 0.54 V @ 1 A
? Low profile - 0.55 mm maximum - in the new package
MicroFET 2x2 Thin
? Free from halogenated compounds and antimony oxides
? RoHS compliant
Pin 1
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 Thin package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
A
NC
D
A 1
6 C
NC 2
D 3
5 G
4 S
C
G
S
MicroFET 2x2 Thin
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
20
±8
Units
V
V
I D
P D
T J , T STG
V RRM
I O
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1a)
(Note 1b)
–3
–6
1.4
0.7
–55 to +150
30
1
A
W
° C
V
A
Thermal Characteristics
R T JA
Thermal Resistance, Junction to Ambient
(Note 1a)
86
R T JA
R T JA
R T JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
86
140
°C/W
Package Marking and Ordering Information
Device Marking
59
Device
FDFMA2P859T
Package
MicroFET 2x2 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDFMA2P859T Rev.B
1
www.fairchildsemi.com
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