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参数资料
| 型号： | FDFMA2P859T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A MICROFET |
| 产品目录绘图： | MicroFET 2x2, SC-75 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDFMA2P859TDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DSS
' T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = –250 P A, V GS = 0 V
I D = –250 P A, referenced to 25 °C
V DS = –16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
–20
–12
–1
±100
V
mV /° C
P A
nA
On Characteristics
V GS(th)
' V GS(th)
' T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = –250 P A
I D = –250 P A, referenced to 25 °C
–0.4
–0.7
2
–1.3
V
mV/°C
V GS = –4.5 V, I D = –3.0 A
V GS = –2.5 V, I D = –2.5 A
90
120
120
160
r DS(on)
Static Drain to Source On Resistance
V GS = –1.8 V, I D = –1.0 A
172
240
m :
V GS = –4.5 V, I D = –3.0 A
T J = 125 °C
118
160
g FS
Forward Transconductance
V DS = –5 V, I D = –3.0 A
7
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V, V GS = 0 V,
f = 1.0 MHz
435
80
45
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
9
18
ns
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = –10 V, I D = –1.0 A
V GS = –4.5 V, R GEN = 6 :
V DD = –10 V, I D = –3.0 A
V GS = –4.5 V
11
15
6
4
0.8
0.9
19
27
12
6
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
–1.1
A
V SD
Source to Drain Diode Forward Voltage V GS = 0 V, I S = –1.1 A
(Note 2)
–0.8
–1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = –3.0 A, di/dt = 100 A/ P s
17
6
ns
nC
Schottky Diode Characteristics
T J = 25 °C
0.3
1.0
P A
I R
Reverse Leakage
V R = 10 V
T J = 85 °C
25
40
P A
T J = 125 °C
T J = 25 °C
0.28
1.0
0.37
2.5
mA
P A
I R
Reverse Leakage
V R = 20 V
T J = 85 °C
74
110
P A
T J = 125 °C
T J = 25 °C
0.73
0.40
1.00
0.41
mA
V
V F
Forward Voltage
I F = 100 mA
T J = 85 °C
0.31
0.33
V
T J = 125 °C
T J = 25 °C
0.26
0.52
0.27
0.54
V
V
V F
Forward Voltage
I F = 1 A
T J = 85 °C
0.45
0.47
V
T J = 125 °C
0.41
0.43
V
?2009 Fairchild Semiconductor Corporation
FDFMA2P859T Rev.B
2
www.fairchildsemi.com
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