参数资料
型号: FDFMA2P859T
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET P-CH 20V 3A MICROFET
产品目录绘图: MicroFET 2x2, SC-75 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3A
开态Rds(最大)@ Id, Vgs @ 25° C: 120 毫欧 @ 3A,4.5V
Id 时的 Vgs(th)(最大): 1.3V @ 250µA
闸电荷(Qg) @ Vgs: 6nC @ 4.5V
输入电容 (Ciss) @ Vds: 435pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-MicroFET(2x2)
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDFMA2P859TDKR
Typical Characteristics T J = 25 °C unless otherwise noted
6
V GS = -4.5 V
3.0
PULSE DURATION = 300 P s
5
V GS = -2 V
2.5
V GS = -1.5 V
DUTY CYCLE = 2%MAX
4
V GS = -3.5 V
2.0
V GS = -1.8 V
V GS = -2 V
3
V GS = -3 V
V GS = -2.5 V
V GS = -1.8 V
1.5
V GS = -2.5 V
2
1
PULSE DURATION = 300 P s
DUTY CYCLE = 2% MAX
V GS = -1.5 V
1.0
V GS = -3 V
V GS = -3.5 V
V GS = -4.5 V
0
0
0.5
1.0
1.5
2.0
2.5
0.5
0
1
2
3
4
5
6
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.4
I D = -3.0 A
-I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
0.28
PULSE DURATION = 300 P s
1.3
1.2
1.1
V GS = -4.5 V
0.24
0.20
0.16
DUTY CYCLE = 2% MAX
I D = -1.5 A
T J = 125 o C
1.0
0.9
0.12
0.08
T J = 25 o C
0.8
-50
-25
0
25
50
75
100
125
150
0.04
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
6
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
5
PULSE DURATION = 300 P s
DUTY CYCLE = 2% MAX
V DS = -5 V
1
V GS = 0 V
T J = 125 o C
4
0.1
3
2
0.01
T J = 25 o C
1
T J = 125 o C
T J = 25 o C
0.001
T J = -55 o C
T J = -55 o C
0
0.0001
0
0.5
1.0
1.5
2.0
2.5
0
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDFMA2P859T Rev.B
4
www.fairchildsemi.com
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