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| 型号： | FDFMA2P853 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A MICROFET6 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDFMA2P853DKR FDFMA2P853DKR-ND FDFMA2P853FSDKR |
September 2008
FDFMA2P853
Integrated P-Channel PowerTrench ? MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
Features
MOSFET:
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
l size
The MicroFET 2x2 package offers exceptional thermal
perfo rmance for it's physica and is well suited to linear
mode applications.
-3.0 A, -20V. R DS(ON) = 120 m
R DS(ON) = 160 m
R DS(ON) = 240 m
Schottky:
V F < 0.46 V @ 500 mA
@ V GS = -4.5 V
@ V GS = -2.5 V
@ V GS = -1.8 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
RoHS Compliant
A
NC D
A
1
6
C
MicroFET
C
C
G
D
S
NC
D
2
3
5
4
G
S
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Ratings
-20
8
Units
V
V
I D
V RRM
I O
P D
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
- 3.0
-6
3 0
1
1.4
0.7
A
V
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
o
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86
R
R
R
JA
JA
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
86
140
o
C/W
Package Marking and Ordering Information
Device Marking
.853
Device
FDFMA2P853
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
?200 8 Fairchild Semiconductor Corporation
1
FDFMA2P853 Rev. D 2 (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853T | 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMA2P857 | 功能描述:MOSFET 20V P-Ch Shtky Diode PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMA2P857_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ |
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