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参数资料
| 型号： | FDFMA2P853 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A MICROFET6 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDFMA2P853DKR FDFMA2P853DKR-ND FDFMA2P853FSDKR |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
BV DSS
T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 A
I D = –250 A, Referenced to 25 C
–20
–12
V
mV/ C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = –16 V,
V GS = ± 8 V,
V GS = 0 V
V DS = 0 V
–1
±100
A
nA
On Characteristics
(Note 2)
V GS(th)
V GS(th)
T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 A
I D = –250 A, Referenced to 25 C
V GS = –4.5 V, I D = –3.0 A
–0.4
–0.7
2
90
–1.3
120
V
mV/ C
m
On–Resistance
V GS = –2.5 V, I D = –2.5 A
V GS = –1.8 V, I D = –1.0 A
V GS = –4.5 V, I D = –3.0 A, T J =125 C
120
172
118
160
240
160
I D(on)
On–State Drain Current
V GS = –4.5 V, V DS = –5 V
–20
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –3.0 A
7
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V,
f = 1.0 MHz
V GS = 0 V,
435
80
45
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V DD = –10 V, I D = –1 A,
V GS = –4.5 V, R GEN = 6
9
11
15
6
18
19
27
12
ns
ns
ns
ns
Q g
Q gs
Total Gate Charge
Gate–Source Charge
V DS = –10 V,
V GS = –4.5 V
I D = –3.0 A,
4
0.8
6
nC
nC
Q gd
Gate–Drain Charge
0.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–1.1
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = –1.1 A
(Note 2)
–0.8
–1.2
V
Voltage
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = –3.0 A,
dI F /dt = 100 A/μs
17
6
ns
nC
Schottky Diode Characteristics
I R
Reverse Leakage
V R = 5 V
T J = 25 C
9.9
50
A
T J = 125 C
2.3
10
mA
I R
Reverse Leakage
V R = 20 V
T J = 25 C
9.9
100
A
T J = 85 C
T J = 125 C
0.3
2.3
1
10
mA
mA
V F
Forward Voltage
I F = 500mA
T J = 25 C
0.4
0.46
V
T J = 125 C
0.3
0.35
V F
Forward Voltage
I F = 1A
T J = 25 C
0.5
0.55
V
T J = 125 C
0.49
0.54
2
FDFMA2P853 Rev D 2 (W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853T | 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMA2P857 | 功能描述:MOSFET 20V P-Ch Shtky Diode PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMA2P857_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ |
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