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参数资料
| 型号： | FDFM2N111 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 4A 3X3 MLP |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 273pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-MLP，Power33 |
| 供应商设备封装： | MicroFET 3x3mm |
| 包装： | 带卷 (TR) |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
? BV DSS
? T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
I D = 250 μ A, V GS = 0V
I D = 250 μ A,
Referenced to 25°C
V GS = 0V, V DS = 16V
V GS = ± 12V, V DS = 0V
20
-
-
-
-
12
-
-
-
-
1
± 100
V
mV/°C
μ A
nA
On Characteristics (Note 2)
V GS(TH)
? V GS(TH)
? T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 250 μ A
I D = 250 μ A,
Referenced to 25°C
0.6
-
1.0
-3
1.5
-
V
mV/°C
I D = 4.0A, V GS = 4.5V
-
54
100
R DS(ON)
I D(ON)
g FS
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
I D = 3.3A, V GS = 2.5V
I D = 4.0A, V GS = 4.5V,
T J = 125°C
V GS = 2.5V, V DS = 5V
I D = 4A, V DS = 5V
-
-
10
-
83
74
-
9.7
150
147
-
-
m ?
A
S
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 10V, V GS = 0V,
f = 1MHz
V GS = 0V, f = 1MHz,
-
-
-
-
273
63
37
1.6
-
-
-
-
pF
pF
pF
?
Switching Characteristics (Note 2)
t d(ON)
Turn-On Delay Time
-
6
12
ns
t r
t d(OFF)
t f
Q g
Q gs
Q gd
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10V, I D = 1A
V GS = 4.5V, R GEN = 6 ?
V DS = 10V, I D = 4.0A,
V GS = 4.5V
-
-
-
-
-
-
7
11
1.7
2.7
0.6
0.9
14
20
3.4
3.8
-
-
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-
-
1.4
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V GS = 0V, I S = 1.4 A (Note 2)
I F = 4.0A, dI F /dt=100A/ μ s
-
-
-
0.8
11
3
-1.2
-
-
V
ns
nC
Schottky Diode Characteristic
V R
Reverse Voltage
I R = 1mA
20
-
-
V
I R
V F
Reverse Leakage
Forward Voltage
V R = 5V
I F = 1A
T J = 25°C
T J = 100°C
T J = 25°C
-
-
-
0.32
100
10
0.39
μ A
mA
V
2
FDFM2N111 Rev. C 2 (W)
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