参数资料
型号: FDFM2P110
厂商: Fairchild Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET P-CH 20V 3.5A 3X3 MLP
产品培训模块: High Voltage Switches for Power Processing
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 140 毫欧 @ 3.5A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 4nC @ 4.5V
输入电容 (Ciss) @ Vds: 280pF @ 10V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: 6-MLP,Power33
供应商设备封装: MicroFET 3x3mm
包装: 带卷 (TR)
August 2005
FDFM2P110
Integrated P-Channel PowerTrench ? MOSFET and Schottky Diode
General Description
FDFM2P110 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
This device is designed specifically as a single package
solution for Buck Boost. It features a fast switching, low
gate charge MOSFET with very low on-state resistance.
Applications
Buck Boost
Features
-3.5 A, -20 V R DS(ON) = 140m ? @ V GS = -4.5 V
R DS(ON) = 200m ? @ V GS = -2.5 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
PIN 1
A
S
G
A
1
6
A
A
C/D
S
D
S
G
2
3
5
4
S
D
TOP
BOTTOM
MLP 3x3
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
-20
± 12
Units
V
V
I D
V RRM
I O
P D
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
-3.5
-10
20
2
2
0.8
A
V
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
o
C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
o
C/W
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
145
o C/W
Package Marking and Ordering Information
Device Marking
2P110
Device
FDFM2P110
Reel Size
7inch
Tape Width
12mm
Quantity
3000 units
?2005 Fairchild Semiconductor Corporation
1
FDFM2P110 Rev. C4 (W)
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