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参数资料
| 型号： | FDFMA2N028Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.7A MLP2X2 |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 3.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 455pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDFMA2N028ZDKR |
March 200 8
FDFMA2N028Z
Integrated N-Channel PowerTrench ? MOSFET and Schottky Diode
20V, 3.7A, 68m Ω
Features
MOSFET
Max r DS(on) = 68m Ω at V GS = 4.5V, I D = 3.7A
Max r DS(on) = 86m Ω at V GS = 2.5V, I D = 3.3A
HBM ESD protection level > 2kV (Note 3)
Schottky
V F < 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
RoHS Compliant
Pin 1
General Description
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low on-state resistance,
and an independently connected schottky diode with low forward
voltage.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Application
DC - DC Conversion
A
NC
D
A 1
6 C
NC 2
D 3
5 G
4 S
C
G
S
MicroFET 2X2
MOSFET Maximum Ratings T J = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
20
±12
Units
V
V
I D
P D
T J , T STG
V RR
I O
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1a)
(Note 1b)
3.7
6
1.4
0.7
-55 to +150
20
2
A
W
° C
V
A
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
(Note 1a)
86
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
86
140
°C/W
Package Marking and Ordering Information
Device Marking
. N28
Device
FDFMA2N028Z
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
?200 8 Fairchild Semiconductor Corporation
FDFMA2N028Z Rev. B1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDFMA2P029Z | MOSFET P-CH 20V 3.1A 2X2MLP |
| FDFMA2P853T | MOSFET P-CH 20V 3A 6-MICROFET |
| FDFMA2P853 | MOSFET P-CH 20V 3A MICROFET6 |
| FDFMA2P857 | MOSFET P-CH 20V 3A MICROFET2X2 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDFMA2N028Z_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ |
| FDFMA2P029Z | 功能描述:MOSFET -20V P-Channel PT MFET_SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMA2P029Z_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m |
| FDFMA2P853 | 功能描述:MOSFET MLP 2X2 DUAL INTEGRATED PCH PO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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