- 您现在的位置：买卖IC网 > Datasheet目录418 > FDD8880 (Fairchild Semiconductor)MOSFET N-CH 30V 58A DPAK Datasheet资料下载
参数资料
| 型号： | FDD8880 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 58A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 58A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1260pF @ 15V |
| 功率 - 最大： | 55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD8880DKR |
Typical Characteristics T C = 25 ° C unless otherwise noted
1000
500
If R = 0
100
10 μ s
100
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
OPERATION IN THIS
100 μ s
STARTING T J = 25 o C
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10
1
SINGLE PULSE
10ms
STARTING T J = 150 o C
0.1
T J = MAX RATED
T C = 25 o C
DC
1
1
10
60
0.01
0.1 1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
80
60
V GS = 5V
V GS = 10 V
V GS = 4V
40
T J = 25 o C
40
V GS = 3V
20
T J = 175 o C
T J = -55 o C
20
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
1.5
2.0 2.5 3.0 3.5
4.0
0
0
0.25
0.5
0.75
1.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
25
I D = 35A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.8
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.6
20
1.4
15
I D = 1A
1.2
1.0
10
0.8
V GS = 10V, I D = 35A
5
2
4
6
8
10
0.6
-80
-40
0 40 80 120
160
200
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
?200 8 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8880 Rev. B 3
相关PDF资料 |
PDF描述 |
|---|---|
| FDD8N50NZTM | MOSFET N-CH 500V DPAK |
| FDFM2N111 | MOSFET N-CH 20V 4A 3X3 MLP |
| FDFM2P110 | MOSFET P-CH 20V 3.5A 3X3 MLP |
| FDFMA2N028Z | MOSFET N-CH 20V 3.7A MLP2X2 |
| FDFMA2P029Z | MOSFET P-CH 20V 3.1A 2X2MLP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD8880_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 58A, 9mヘ |
| FDD8880_F054 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD8880_G | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-Channel PowerTrench? MOSFET |
| FDD8880_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD8882 | 功能描述:MOSFET 30V N-Channel PowerTrench? MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。