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参数资料
| 型号： | FDD8796 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 35A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.7 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 52nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2610pF @ 13V |
| 功率 - 最大： | 88W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
| 其它名称： | FDD8796DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
? B VDSS
? T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to
25°C
25
7
V
mV/° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 20V
V GS = 0V
V GS = ±20V
T J = 150°C
1
250
±100
μ A
nA
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to
25°C
1.2
1.8
-6.7
2.5
V
mV/°C
V GS = 10V, I D = 35A
4.5
5.7
r DS(on)
Drain to Source On Resistance
V GS = 4.5V, I D = 35A
V DS = 10V, I D = 35A
T J = 175°C
6.0
6.9
8.0
9.5
m ?
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 13V, V GS = 0V,
f = 1MHz
f = 1MHz
1960
455
315
1.1
2610
605
475
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
10
20
ns
V GS = 0 to 5V V DD =13V,
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V DD =13V, I D = 35A
V GS = 10V, R GS = 20 ?
V GS = 0 to10V
I D = 35A,
I g = 1.0mA
24
99
57
37
19
6
6
39
158
91
52
27
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Source to Drain Diode Voltage
Reverse Recovery Time
V GS = 0V, I S = 35A
V GS = 0V, I S = 15A
I F = 35A, di/dt = 100A/ μ s
0.9
0.8
30
1.25
1.0
45
V
V
ns
Q rr Reverse Recovery Charge
Notes:
1: Pulse time < 300 μ s, Duty cycle = 2%.
I F = 35A, di/dt = 100A/ μ s
23
35
nC
2: Starting T J = 25 °C, L = 0.3mH, I AS = 24.7A, V DD = 23V, V GS = 10V.
FDD8796/FDU8796 Rev. B
2
www.fairchildsemi.com
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