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参数资料
| 型号： | FDD8896 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 94A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 94A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.7 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2525pF @ 15V |
| 功率 - 最大： | 80W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | FDD8896DKR |
Typical Characteristics T C = 25 ° C unless otherwise noted
1000
500
If R = 0
100
10 μ s
100
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
1
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
100 μ s
1ms
10ms
DC
10
1
STARTING T J = 25 o C
STARTING T J = 150 o C
1
10
60
0.01
0.1 1 10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
80
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
100
80
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
V GS = 5V
V GS = 4V
V GS = 3V
40
20
T J = 25 o C
40
20
V GS = 10 V
0
T J = 175 o C
T J = -55 o C
0
V GS = 2.5V
1.5
2.0 2.5 3.0
3.5
0
0.2
0.4
0.6
0.8
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
14
I D = 35A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
12
10
8
1.4
1.2
1.0
6
I D = 1A
0.8
4
0.6
V GS = 10V, I D = 35A
2
4
6
8
10
-80
-40
0 40 80 120
160
200
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
?2004 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8896 / FDU8896 Rev. C1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8896_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 94A, 5.7m?? |
| FDD8896_F085 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8896_G | 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel Power Trench MOSFET 30V,94A, 5.7m |
| FDD8896_NBSW006 | 功能描述:MOSFET 30V35A5.7M0 DPAK NCHPWR TRNCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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