- 您现在的位置：买卖IC网 > PDF目录375786 > FDD8896 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDD8896 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 17 A, 30 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | DPAK-3 |
| 文件页数： | 10/11页 |
| 文件大小： | 130K |
| 代理商： | FDD8896 |
2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
F
PSPICE Thermal Model
REV 23 July 2003
FDD8896T
CTHERM1 TH 6 9e-4
CTHERM2 6 5 1e-3
CTHERM3 5 4 2e-3
CTHERM4 4 3 3e-3
CTHERM5 3 2 7e-3
CTHERM6 2 TL 8e-2
RTHERM1 TH 6 3.0e-2
RTHERM2 6 5 1.0e-1
RTHERM3 5 4 1.8e-1
RTHERM4 4 3 2.8e-1
RTHERM5 3 2 4.5e-1
RTHERM6 2 TL 4.6e-1
SABER Thermal Model
SABER thermal model FDD8896T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =9e-4
ctherm.ctherm2 6 5 =1e-3
ctherm.ctherm3 5 4 =2e-3
ctherm.ctherm4 4 3 =3e-3
ctherm.ctherm5 3 2 =7e-3
ctherm.ctherm6 2 tl =8e-2
rtherm.rtherm1 th 6 =3.0e-2
rtherm.rtherm2 6 5 =1.0e-1
rtherm.rtherm3 5 4 =1.8e-1
rtherm.rtherm4 4 3 =2.8e-1
rtherm.rtherm5 3 2 =4.5e-1
rtherm.rtherm6 2 tl =4.6e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
相关PDF资料 |
PDF描述 |
|---|---|
| FDV301N | Digital FET , N-Channel |
| FDV302 | Digital FET, P-Channel |
| FDV302P | Digital FET, P-Channel |
| FDV303 | Digital FET, N-Channel |
| FDV303N | Digital FET, N-Channel |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8896_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 94A, 5.7m?? |
| FDD8896_F085 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8896_G | 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel Power Trench MOSFET 30V,94A, 5.7m |
| FDD8896_NBSW006 | 功能描述:MOSFET 30V35A5.7M0 DPAK NCHPWR TRNCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。