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参数资料
| 型号： | FDG6301N_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 25A SC70-6 |
| 标准包装： | 10,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 220mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 9.5pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
? BV DSS / ? T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
V GS = 0 V, I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V DS = 20 V, V GS = 0 V
T J = 55°C
V GS = 8 V, V DS = 0 V
25
25
1
10
100
V
mV / o C
μA
μA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
? V GS(th) / ? T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V GS = 4.5 V, I D = 0.22 A
0.65
0.85
-2.1
2.6
1.5
4
V
mV / o C
?
V GS = 2.7 V, I D = 0.19 A
T J =125°C
5.3
3.7
7
5
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 0.22 A
0.22
0.2
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
9.5
6
1.3
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 5 V, I D = 0.5 A,
V GS = 4.5 V, R GEN = 50 ?
V DS = 5 V, I D = 0.22 A,
V GS = 4.5 V
5
4.5
4
3.2
0.29
0.12
0.03
10
10
8
7
0.4
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Source Current
0.25
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.25 A
(Note 2)
0.8
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed
by design while R θ CA is determined by the user's board design. R θ JA = 415 O C/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDG6301N Rev.E 1
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6301N_F085 | MOSFET 2N-CH 25V 220MA SC70-6 |
| FDG6303N_D87Z | MOSFET N-CH DUAL 25V SC70-6 |
| FDG6304P_D87Z | MOSFET P-CH DUAL 25V SC70-6 |
| FDG6306P | MOSF P CH DUAL 20V 600MA SC70-6 |
| FDG6308P | MOSFET P-CH DUAL 20V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6302 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel, Digital FET |
| FDG6302P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6302P_D87Z | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6302P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6302PD87Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 25V V(BR)DSS | TSOP |
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