参数资料
型号: FDG6301N_D87Z
厂商: Fairchild Semiconductor
文件页数: 2/5页
文件大小: 0K
描述: MOSFET N-CH DUAL 25A SC70-6
标准包装: 10,000
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 220mA
开态Rds(最大)@ Id, Vgs @ 25° C: 4 欧姆 @ 220mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 0.4nC @ 4.5V
输入电容 (Ciss) @ Vds: 9.5pF @ 10V
功率 - 最大: 300mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 带卷 (TR)
Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
? BV DSS / ? T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
V GS = 0 V, I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V DS = 20 V, V GS = 0 V
T J = 55°C
V GS = 8 V, V DS = 0 V
25
25
1
10
100
V
mV / o C
μA
μA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
? V GS(th) / ? T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V GS = 4.5 V, I D = 0.22 A
0.65
0.85
-2.1
2.6
1.5
4
V
mV / o C
?
V GS = 2.7 V, I D = 0.19 A
T J =125°C
5.3
3.7
7
5
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 0.22 A
0.22
0.2
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
9.5
6
1.3
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 5 V, I D = 0.5 A,
V GS = 4.5 V, R GEN = 50 ?
V DS = 5 V, I D = 0.22 A,
V GS = 4.5 V
5
4.5
4
3.2
0.29
0.12
0.03
10
10
8
7
0.4
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
Maximum Continuous Source Current
0.25
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.25 A
(Note 2)
0.8
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed
by design while R θ CA is determined by the user's board design. R θ JA = 415 O C/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDG6301N Rev.E 1
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