- 您现在的位置：买卖IC网 > Datasheet目录418 > FDG6304P_D87Z (Fairchild Semiconductor)MOSFET P-CH DUAL 25V SC70-6 Datasheet资料下载
参数资料
| 型号： | FDG6304P_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 25V SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 Product Discontinuation 03/Dec/2009 |
| 标准包装： | 10,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 410mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 欧姆 @ 410mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 62pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
July 1999
FDG6304P
Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
Features
-25 V, -0.41 A continuous, -1.5 A peak.
R DS(ON) = 1.1 ? @ V GS = -4.5 V,
R DS(ON) = 1.5 ? @ V GS = -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
SC70-6
D1
SOT-23
S2
G2
.04
SuperSOT TM -6
SuperSOT TM -8
1 or 4 *
SO-8
SOT-223
6 or 3
SC70-6
S1
G1
D2
2 or 5
3 or 6
5 or 2
4 or 1
*
* The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
FDG6304P
-25
-8
Units
V
V
I D
Drain/Output Current
- Continuous
-0.41
A
- Pulsed
-1.5
P D
Maximum Power Dissipation
(Note 1)
0.3
W
T J ,T STG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6.0
°C
kV
Human Body Model (100 pF / 1500 ? )
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
FDG6304P Rev.E1
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6306P | MOSF P CH DUAL 20V 600MA SC70-6 |
| FDG6308P | MOSFET P-CH DUAL 20V SC70-6 |
| FDG6316P | MOSF P CH DUAL 12V 700MA SC70-6 |
| FDG6317NZ | MOSFET N-CH DUAL 20V SC70-6 |
| FDG6318PZ | MOSFET P-CH DUAL 20V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6306P | 功能描述:MOSFET P-Ch PowerTrench Specified 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6306P_D87Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6306P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6308 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDG6308P | 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。