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参数资料
| 型号： | FDG6318PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 780 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.62nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 85.4pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
January 2003
FDG6318PZ
Dual P-Channel, Digital FET
General Description
Features
These dual P-Channel logic level enhancement mode
MOSFET are produced using Fairchild Semiconductor’s
especially tailored to minimize on-state resistance. This
? -0.5A, -20V.
r DS(ON) = 780m ? ( Max)@ V GS = -4.5 V
r DS(ON) = 1200m ? ( Max) @ V GS = -2.5 V
device has been designed especially for bipolar digital
transistors and small signal MOSFETS
Applications
? Battery management
? Very low level gate drive requirements allowing direct
operation in 3V circuits (V GS(TH) < 1.5V).
? Gate-Source Zener for ESD ruggedness (>1.4kV Human
Body Model).
? Compact industry standard SC-70-6 surface mount
package.
S
D
G
D
S 1 or 4
G 2 or 5
6 or 3 D
5 or 2 G
G
Pin 1
S
SC70-6
D 3 or 6
The pinouts are symmetrical; pin1 and pin 4 are interchangeable.
4 or 1 S
MOSFET Maximum Ratings T A =25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-20
± 12
Units
V
V
Drain Current
Continuous (T C = 100 C, V GS = - 2.5V)
C
I D
P D
T J , T STG
ESD
Continuous (T C = 25 o C, V GS = - 4.5V)
o
Pulsed
Power dissipation
Derate above 25°C
Operating and Storage Temperature
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model ( 100pF / 1500 ? )
-0.5
-0.3
Figure 4
0.3
2.4
-55 to 150
1.4
A
A
W
mW/ o C
o
kV
Thermal Characteristics
R θ JA
Thermal Resistance Junction to Ambient (Note 1)
415
o
C/W
Package Marking and Ordering Information
Device Marking
.68
Device
FDG6318PZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000
?2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6318P | MOSFET P-CH DUAL 20V SC70-6 |
| FDG6320C_D87Z | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6321C | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6322C_D87Z | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6332C_F085 | MOSFET N/P-CH 20V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6320C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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