- 您现在的位置：买卖IC网 > Datasheet目录418 > FDG6322C_D87Z (Fairchild Semiconductor)MOSFET N/P-CH DUAL 25V SC70-6 Datasheet资料下载
参数资料
| 型号： | FDG6322C_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH DUAL 25V SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 10,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA，410mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 220mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 9.5pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
September 2013
FDG6322C
Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
bipolar digital transistors and small signal MOSFETs. Since
bias resistors are not required, this dual digital FET can
replace several different digital transistors, with different bias
resistor values.
Features
N-Ch 0.22 A, 25 V, R DS(ON) = 4.0 ? @ V GS = 4.5 V,
R DS(ON) = 5.0 ? @ V GS = 2.7 V.
P-Ch -0.41 A,-25V, R DS(ON) = 1.1 ? @ V GS = -4.5V,
R DS(ON) = 1.5 ? @ V GS = -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
SOT-23
SuperSOT TM -6
SOT-8
SO-8
SOIC-14
D1
G2
S2
1
Q1
6
2
5
SC70-6
pin 1
S1
G1
D2
3
Q2
4
Mark: .22
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DS S
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
N-Channel
25
8
P-Channel
-25
-8
Units
V
V
I D
Drain Current
- Continuous
0.22
-0.41
A
- Pulsed
0.65
-1.2
P D
Maximum Power Dissipation
(Note 1)
0.3
W
T J ,T STG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note1)
415
°C/W
? 2012 Fa irchild Semiconductor Corporation
FDG6322C Rev .F3
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6332C_F085 | MOSFET N/P-CH 20V SC70-6 |
| FDG6332C | MOSFET N/P-CH 20V SC70-6 |
| FDG6335N | MOSFET N-CH 20V 700MA SOT-363 |
| FDG8842CZ | MOSFET N/P-CH 30V/-25V SC70-6 |
| FDG8850NZ | MOSFET DUAL N-CH 30V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6323 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated Load Switch |
| FDG6323L | 功能描述:功率驱动器IC SC70-6 LD SW 2.5-8V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FDG6323L | 制造商:Fairchild Semiconductor Corporation 功能描述:SWITCH INTEGRATED LOAD SMD 制造商:Fairchild Semiconductor Corporation 功能描述:SWITCH, INTEGRATED LOAD, SMD |
| FDG6323L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDG6323L_D87Z | 功能描述:开关变换器、稳压器与控制器 SC70-6 LD SW 2.5-8V RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。