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| 型号： | FDG8850NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N-CH 30V SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | MOSFET SC70-6 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 750mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.44nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 120pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDG8850NZDKR |
April 2007
FDG8850NZ
Dual N-Channel PowerTrench ? MOSFET
30V,0.75A,0.4 Ω
tm
Features
Max r DS(on) = 0.4 Ω at V GS = 4.5V, I D = 0.75A
Max r DS(on) = 0.5 Ω at V GS = 2.7V, I D = 0.67A
Very low level gate drive requirements allowing operation
in 3V circuits(V GS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as
a replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with differ-
ent bias resistor values.
S2
D1
G2
S1
Q1
D1
G1
D2
G1
D2
Q2
G2
S2
S1
SC70-6
Pin 1
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±12
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
0.75
2.2
A
P D
T J , T STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
0.36
0.30
–55 to +150
W
° C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
(Note 1b)
350
415
°C/W
Package Marking and Ordering Information
Device Marking
.50
?2007 Fairchild Semiconductor Corporation
FDG8850NZ Rev.B
Device
FDG8850NZ
1
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
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