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| 型号： | FDH055N15A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V TO-247-3 |
| 标准包装： | 150 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 156A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.9 毫欧 @ 120A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 120nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9445pF @ 75V |
| 功率 - 最大： | 429W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
November 2013
FDH055N15A
N-Channel PowerTrench ? MOSFET
150 V, 167 A, 5.9 m Ω
Features
? R DS(on) = 4.8 m Ω (Typ.) @ V GS = 10 V, I D = 120 A
? Fast Switching Speed
? Low Gate Charge
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor ’s advanced PowerTrench ? process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
? Synchronous Rectification for ATX / Sever / Telecom PSU
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
? Micro Solar Inverter
G
D
S
TO-247
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDH055N15A
150
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
±20
167*
118
156
V
A
I DM
Drain Current
- Pulsed
(Note 1)
668
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
835
6.0
429
2.86
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o
o
C
C
*Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156 A.
Thermal Characteristics
Symbol
Parameter
FDH055N15A
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.35
40
o
C/W
?2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. C1
1
www.fairchildsemi.com
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