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参数资料
| 型号： | FDH50N50_F133 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 50A TO-247 |
| 标准包装： | 30 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 48A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 105 毫欧 @ 24A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 137nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6460pF @ 25V |
| 功率 - 最大： | 625W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
November 2013
FDH50N50 / FDA50N50
N-Channel UniFET TM MOSFET
500 V, 48 A, 105 m Ω
Features
? R DS(on) = 89 m Ω (Typ.) @ V GS = 10 V, I D = 24 A
? Low Gate Charge (Typ. 105 nC)
? Low C rss (Typ. 45 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
G
D
S
TO-247
G
D
S
TO-3PN
G
S
T C = 25 C unless otherwise noted.
Absolute Maximum Ratings
o
Symbol
V DSS
Drain-Source Voltage
Parameter
FDH50N50_F133 / FDA50N50
500
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
48
30.8
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
192
± 20
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1868
48
62.5
20
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
625
5
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDH50N50_F133 / FDA50N50
0.2
40
Unit
° C/W
?2012 Fairchild Semiconductor Corporation
FDH50N50 / FDA50N50 Rev. C1
1
www.fairchildsemi.com
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