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参数资料
| 型号： | FDI045N10A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 120A I2PAK-3 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 74nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5270pF @ 50V |
| 功率 - 最大： | 263W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3（直引线） |
| 供应商设备封装： | TO-262-3 |
| 包装： | 管件 |
November 2013
FDP045N10A / FDI045N10A
N-Channel PowerTrench ? MOSFET
100 V, 164 A, 4.5 m Ω
Features
? R DS(on) = 3.8 m Ω ( Typ.) @ V GS = 10 V, I D = 100 A
? Fast Switching Speed
? Low Gate Charge, Q G = 54 nC (Typ.)
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advance PowerTrench ? process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor drives and Uninterruptible Power Supplies
? Micro Solar Inverter
D
GD
DS
S
TO-220
G
I 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP045N10A_F102
FDI045N10A_F102
100
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon LImited)
- Continuous (T C = 25 o C, Package Limited)
±20
164*
116
120
V
A
I DM
Drain Current
- Pulsed
(Note 1)
656
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
637
6.0
263
1.75
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o
o
C
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP045N10A_F102
FDI045N10A_F102
0.57
62.5
Unit
o C/W
?2011 Fairchild Semiconductor Corporation
FDP045N10A / FDI045N10A Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDI045N10A_F102 | 功能描述:MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI047AN08A0 | 功能描述:MOSFET 75V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI047AN08A0_F085 | 功能描述:MOSFET 75V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDI100 | 制造商:DEC 制造商全称:DEC 功能描述:1 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDI101 | 制造商:DEC 制造商全称:DEC 功能描述:1 AMP FAST RECOVERY BRIDGE RECTIFIERS |
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