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参数资料
| 型号： | FDI045N10A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 120A I2PAK-3 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 74nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5270pF @ 50V |
| 功率 - 最大： | 263W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3（直引线） |
| 供应商设备封装： | TO-262-3 |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FDP045N10A_F102
FDI045N10A_F102
Top Mark
FDP045N10A
FDI045N10A
Package
TO-220
I 2 -PAK
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V
V DS = 80 V, V GS = 0 V
V DS = 80 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
o
100
-
-
-
-
-
0.07
-
-
-
-
-
1
500
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 100 A
V DS = 10 V, I D = 100 A
2.0
-
-
-
3.8
132
4.0
4.5
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss (er)
Q g(tot)
Q gs
Q gs2
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 50 V, V GS = 0 V
f = 1 MHz
V DS = 50 V, V GS = 0 V
V GS = 10 V, V DS = 50 V,
I D = 100 A
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
-
-
3960
925
34
1520
54
17
8
13
1.9
5270
1230
-
-
74
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 50 V, I D = 100 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
23
26
50
15
56
62
110
40
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
164*
656
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 100 A
V GS = 0 V, V DD = 50 V, I SD = 100 A,
dI F /dt = 100 A/ μ s
-
-
-
-
75
120
1.3
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, I AS = 20.6 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 100 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDP045N10A / FDI045N10A Rev. C1
2
www.fairchildsemi.com
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