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参数资料
| 型号： | FDH45N50F_F133 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 50A TO-247 |
| 标准包装： | 30 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 45A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 22.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 137nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6630pF @ 25V |
| 功率 - 最大： | 625W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-247-3 |
| 包装： | 管件 |
November 2013
FDH45N50F
N-Channel UniFET TM FRFET ? MOSFET
500 V, 45 A, 120 m Ω
Features
? R DS(on) = 105 m Ω (Typ.) @ V GS = 10 V, I D = 22.5 A
? Low Gate Charge (Typ. 105 nC)
? Low C rss (Typ. 62 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
Applications
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. The body diode’s reverse recovery performance
of UniFET FRFET ? MOSFET has been enhanced by lifetime
control. Its t rr is less than 100nsec and the reverse dv/dt immuni-
ty is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter ap-
plications such as power factor correction (PFC), flat panel dis-
play (FPD) TV power, ATX and electronic lamp ballasts
D
G
G
D
S
TO-247
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FDH45N50F_F133
500
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
45
28.4
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
180
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1868
45
62.5
50
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
625
5
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDH45N50F_F133
0.2
40
Unit
° C/W
?2008 Fairchild Semiconductor Corporation
FDH45N50F Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDH50N50 | 功能描述:MOSFET 500V N-Channel UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH50N50_F133 | 功能描述:MOSFET N-CH/500V/50A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH50SG | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:.050 IDC CONNECTORS DUAL ROW SOCKETS & TRANSITION PLUGS |
| FDH50T | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:.050 IDC CONNECTORS DUAL ROW SOCKETS & TRANSITION PLUGS |
| FDH-50-T | 功能描述:集管和线壳 50 pos. IDC FOUR ROW TRANSITION PLUG RoHS:否 产品种类:1.0MM Rectangular Connectors 产品类型:Headers - Pin Strip 系列:DF50 触点类型:Pin (Male) 节距:1 mm 位置/触点数量:16 排数:1 安装风格:SMD/SMT 安装角:Right 端接类型:Solder 外壳材料:Liquid Crystal Polymer (LCP) 触点材料:Brass 触点电镀:Gold 制造商:Hirose Connector |
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