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参数资料
| 型号： | FDH44N50 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 44A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | MOSFET TO-247 Pkg |
| 标准包装： | 150 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 22A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 108nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5335pF @ 25V |
| 功率 - 最大： | 750W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
Decem ber 2013
FDH44N50
N-Channel SMPS Power MOSFET
500 V, 44 A, 1 2 0 m?
Features
? Low G ate C harge Q g R esults in S imple D rive Requirement
(Typ. 90 nC)
? Improved Gate, A valanche and H igh R eapplie d dv/dt
R uggedness
? Reduced R DS(on) (110 m? (Typ.) @ V GS = 10 V, I D = 22 A)
? Reduced Miller C apacitance and L ow Inpu t Capacitance
(Typ. C rss = 40 pF)
? Improved S witching S peed with L ow EM I
? 17 5 o C R ated J unction T emperature
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and DMOS
technology. This MOSFET is tailored to reduce on-state
resistance, and to provide better switching performance and
higher avalanche energy strength. This device family is
suitable for switching power converter applications such as
power factor correction (PFC), flat panel display (FPD) TV
power, ATX and electronic lamp ballasts.
Applications
? Lightin g
? Uninterruptible Power Suppl y
? AC-DC Power Suppl y
D
G
G
D
S
TO-247
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
FDH44N50
500
± 30
Unit
V
V
Drain Current
I D
P D
T J , T STG
Continuous (T C = 25 o C, V GS = 10 V)
Continuous (T C = 100 o C, V GS = 10 V)
Pulsed 1
Power D issipation
Derate A bove 25 o C
Operating and Storage Temperature
Soldering Temperature for 10 S econds
Mounting Torque, 8-32 or M3 Screw
44
32
176
750
5
-55 to 175
300 (1.6mm from case)
10ibf*in (1.1N*m)
A
A
A
W
W / o C
o C
o C
Thermal Characteristics
+ θ
+ θ
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDH44N50
0.2
40
6 ?
6 ?
?200 2 Fairchild Semiconductor Corporation
FDH44N50 Rev. C 1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDH45N50F_F133 | MOSFET N-CH 500V 50A TO-247 |
| FDH50N50_F133 | MOSFET N-CH 500V 50A TO-247 |
| FDH5500_F085 | MOSFET N-CH 55V 75A TO-247 |
| FDI030N06 | MOSFET N-CH 60V 120A I2PAK |
| FDI038AN06A0 | MOSFET N-CH 60V 80A TO-262AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDH44N50 | 制造商:Fairchild Semiconductor Corporation 功能描述:Diodes Small signal Package/Case:TO-247 |
| FDH44N50_Q | 功能描述:MOSFET Single N-Ch 500V .12Ohm SMPS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH45N50F | 功能描述:MOSFET 500V N-CHANNEL MOSFET FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH45N50F_0605 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET, FRFET |
| FDH45N50F_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET, FRFET |
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