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| 型号： | FDH44N50 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 44A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | MOSFET TO-247 Pkg |
| 标准包装： | 150 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 22A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 108nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5335pF @ 25V |
| 功率 - 最大： | 750W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Part Number
FDH44N50
Top Mark
FDH44N50
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Statics
B VDSS
? B VDSS
/ ? T J
r DS(ON)
V GS(th)
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain to Source On-Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
Reference to 25 o C,
I D = 1 mA
V GS = 10 V, I D = 22 A
V DS = V GS , I D = 250 μA
V DS = 500 V T C = 25 o C
V GS = 0 V T C = 150 o C
V GS = ±20 V
500
-
-
2
-
-
-
-
0.61
0.11
3.15
-
-
-
-
-
0.12
4
25
250
±100
V
V/ °C
?
V
μ A
nA
Dynamics
g fs
Q g(TOT)
Q gs
Q gd
t d(ON)
t r
t d(OFF)
t f
C ISS
C OSS
C RSS
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 50 V, I D = 22 A
V GS = 10 V,
V DS = 400 V,
I D = 44 A
V DD = 250 V,
I D = 44 A,
R G = 2.15 ? ,
R D = 5.68 ?
V DS = 25V, V GS = 0 V,
f = 1 MHz
11
-
-
-
-
-
-
-
-
-
-
-
90
24
31
16
84
45
79
5335
645
40
-
108
29
37
-
-
-
-
-
-
-
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Avalanche Characteristics
E AS
I AR
Single Pulse Avalanche Energy 2
Avalanche Current
1500
-
-
-
-
44
mJ
A
Drain-Source Diode Characteristics
Pulsed Source Current
I S
I SM
Continuous Source Current
(Body Diode)
1
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
-
-
-
-
44
176
A
A
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 44 A
I SD = 44 A, dI SD /dt = 100 A/ μ s
I SD = 44 A, dI SD /dt = 100 A/ μ s
-
-
-
0.900
920
14
1.2
1100
18
V
ns
μ C
Notes:
1: Repetitive rating; pulse - width limited by maximum junction temperature .
2: Starting T J = 25°C, L = 1.61 mH, I AS = 44 A
?200 2 Fairchild Semiconductor Corporation
FDH44N50 Rev. C 1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDH44N50 | 制造商:Fairchild Semiconductor Corporation 功能描述:Diodes Small signal Package/Case:TO-247 |
| FDH44N50_Q | 功能描述:MOSFET Single N-Ch 500V .12Ohm SMPS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH45N50F | 功能描述:MOSFET 500V N-CHANNEL MOSFET FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH45N50F_0605 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET, FRFET |
| FDH45N50F_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET, FRFET |
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