参数资料
型号: FDG8850NZ
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET DUAL N-CH 30V SC70-6
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: MOSFET SC70-6 Pkg
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 750mA
开态Rds(最大)@ Id, Vgs @ 25° C: 400 毫欧 @ 750mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 1.44nC @ 4.5V
输入电容 (Ciss) @ Vds: 120pF @ 10V
功率 - 最大: 300mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 标准包装
产品目录页面: 1608 (CN2011-ZH PDF)
其它名称: FDG8850NZDKR
Typical Characteristics T J = 25°C unless otherwise noted
2.20
2.6
1.76
V GS = 4.5V
V GS = 2.7V
V GS = 2.0V
2.2
V GS = 1.8V
V GS = 2.0V
1.32
V GS =1.8V
1.8
0.88
PULSE DURATION = 80 μ s
1.4
V GS = 2.7V
V GS = 3.5V
0.44
DUTY CYCLE = 0.5%MAX
V GS = 1.5V
1.0
PULSE DURATION = 80 μ s
V GS = 4.5V
0.00
0.0
0.5 1.0 1.5
2.0
0.6
0.00
DUTY CYCLE = 0.5%MAX
0.44 0.88
1.32
1.76
2.20
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
0.8
1.4
I D = 0.75A
V GS = 4.5V
I D =0.38A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
0.6
1.2
1.0
0.4
T J = 125 o C
0.8
T J = 25 o C
0.6
-50
-25
0
25
50
75
100
125
150
0.2
1
2
3
4
5
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On - Resistance
vs Junction Temperature
2.20
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
2
1.76
1.32
0.88
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
VDD = 5V
T J = 150 o C
1
0.1
V GS = 0V
T J = 150 o C
T J = 25 o C
0.01
0.44
T J = 25 o C
0.00
0.0
T J = -55 o C
0.5 1.0 1.5 2.0
2.5
1E-3
0.2
0.4
0.6
T J = -55 o C
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2007 Fairchild Semiconductor Corporation
FDG8850NZ Rev.B
3
www.fairchildsemi.com
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