参数资料
型号: FDG6322C_D87Z
厂商: Fairchild Semiconductor
文件页数: 6/9页
文件大小: 0K
描述: MOSFET N/P-CH DUAL 25V SC70-6
产品变化通告: Mold Compound Change 12/Dec/2007
Mold Compound Change 07/May/2008
标准包装: 10,000
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 220mA,410mA
开态Rds(最大)@ Id, Vgs @ 25° C: 4 欧姆 @ 220mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 0.4nC @ 4.5V
输入电容 (Ciss) @ Vds: 9.5pF @ 10V
功率 - 最大: 300mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 带卷 (TR)
Typical Electrical Characteristics: P-Channel
1.2
V GS =-4.5V -3.0V
-2.7V
2.5
0.9
-2.5V
2
V GS = -2.0V
0.6
-2.0V
1.5
-2.5V
-2.7V
-3.0V
-3.5V
0.3
-1.5V
1
-4.5V
0
0
1
2
3
4
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
1.6
I D = -0.41A
5
-I D , DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
I D = -0.2A
1.4
1.2
1
0.8
0.6
V GS = -4.5V
4
3
2
1
0
T J = 125 ° C
25° C
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T J , JUNCTION TEMPERATURE (°C)
Figure 13. On-Resistance Variation
with Temperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
1
V DS = -5V
T J = -55°C
1
V GS = 0V
0.8
25°C
125°C
0.1
T J = 125°C
25°C
0.6
0.4
0.2
0.01
0.001
-55°C
0
0.5
1
1.5
2
2.5
3
0.0001
0.2
0.4
0.6
0.8
1
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6322C R ev.F3
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