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| 型号： | FDG8842CZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V/-25V SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | MOSFET SC70-6 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V，25V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA，410mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 750mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.44nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 120pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDG8842CZDKR |
April 2007
FDG8842CZ
Complementary PowerTrench ? MOSFET
Q1:30V,0.75A,0.4 Ω ; Q2:–25V,–0.41A,1.1 Ω
tm
Features
Q1: N-Channel
Max r DS(on) = 0.4 Ω at V GS = 4.5V, I D = 0.75A
General Description
These N & P-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
Max r DS(on) = 0.5 Ω at V GS = 2.7V, I D = 0.67A
especially
tailored
to minimize on-state resistance.
This
Q2: P-Channel
Max r DS(on) = 1.1 Ω at V GS = –4.5V, I D = –0.41A
Max r DS(on) = 1.5 Ω at V GS = –2.7V, I D = –0.25A
device has been designed especially for low voltage applica-
tions as a replacement for bipolar digital transistors and small
signal MOSFETs. Since bias resistors are not required, this dual
digital FET can replace several different digital transistors, with
Very low level gate drive requirements
operation in 3V circuits(V GS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
S2
allowing direct
different bias resistor values.
D1
G2
D2
S1
G1
Q1
D1
G2
S1
G1
D2
Q2
S2
SC70-6
Pin 1
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Q1
30
±12
Q2
–25
–8
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
0.75
2.2
–0.41
–1.2
A
P D
T J , T STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
0.36
0.30
–55 to +150
W
° C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
(Note 1b)
350
415
°C/W
Package Marking and Ordering Information
Device Marking
.42
?2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Device
FDG8842CZ
1
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDG8850NZ | MOSFET DUAL N-CH 30V SC70-6 |
| FDH038AN08A1 | MOSFET N-CH 75V 80A TO-247 |
| FDH055N15A | MOSFET N-CH 150V TO-247-3 |
| FDH3632 | MOSFET N-CH 100V 80A TO-247 |
| FDH44N50 | MOSFET N-CH 500V 44A TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG8850NZ | 功能描述:MOSFET 30V Dual N-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG901 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Slew Rate Control Driver IC for P-Channel MOSFETs |
| FDG901D | 功能描述:开关变换器、稳压器与控制器 Control Driver IC P-Ch Slew Rate RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| FDG901D_Q | 功能描述:电源开关 IC - 配电 Control Driver IC P-Ch Slew Rate RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| FDG910D | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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