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| 型号： | FDG6332C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | MOSFET SC70-6 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 700mA，600mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 700mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 113pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDG6332CDKR |
September 2003
FDG6332C
20V N & P-Channel PowerTrench ? MOSFETs
General Description
Features
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
? Q1
? Q2
0.7 A, 20V.
–0.6 A, –20V.
R DS(ON) = 300 m ? @ V GS = 4.5 V
R DS(ON) = 400 m ? @ V GS = 2.5 V
R DS(ON) = 420 m ? @ V GS = –4.5 V
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
? DC/DC converter
? Load switch
? LCD display inverter
S
R DS(ON) = 630 m ? @ V GS = –2.5 V
? Low gate charge
? High performance trench technology for extremely
low R DS(ON)
? SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
D
G
D
1
2
6
5
Pin 1
S
G
3
4
SC70-6
Complementary
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q1
20
± 12
Q2
–20
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
0.7
–0.6
A
– Pulsed
2.1
–2
P D
Power Dissipation for Single Operation
(Note 1)
0.3
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
° C/W
Package Marking and Ordering Information
Device Marking
.32
Device
FDG6332C
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2003 Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6335N | MOSFET N-CH 20V 700MA SOT-363 |
| FDG8842CZ | MOSFET N/P-CH 30V/-25V SC70-6 |
| FDG8850NZ | MOSFET DUAL N-CH 30V SC70-6 |
| FDH038AN08A1 | MOSFET N-CH 75V 80A TO-247 |
| FDH055N15A | MOSFET N-CH 150V TO-247-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6332C"F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N AND P CH 20V 0.18OHM 700mA 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N AND P CH, 20V, 0.18OHM, 700mA, |
| FDG6332C_F085 | 功能描述:MOSFET 20V N&P Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6332C_G | 制造商:Fairchild Semiconductor Corporation 功能描述:LOW POWER MOSFET |
| FDG6332C-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDG6332C Series 20 V 300 mOhm N & P-Channel PowerTrench Mosfet SC70-6 |
| FDG6335N | 功能描述:MOSFET FDG6335N RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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