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参数资料
| 型号： | FDG6318PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 780 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.62nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 85.4pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
PSPICE Electrical Model
.SUBCKT FDG6318PZ 2 1 3 ;
CA 12 8 0.6e-10
rev January 2003
CB 15 14 1.1e-10
CIN 6 8 0.75e-10
DBODY 5 7 DBODYMOD
10
ESG
8 +
6
5
LDRAIN
DRAIN
2
DBREAK 7 11 DBREAKMOD
DPLCAP 10 6 DPLCAPMOD
RSLC1
RLDRAIN
18 +
9
20
ESLC
MWEAK
EBREAK 5 11 17 18 -23.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
GATE
LDRAIN 2 5 1e-9 1
LGATE 1 9 0.47e-9
LSOURCE 3 7 0.47e-9
LGATE
RLGATE
DPLCAP
EVTEMP
RGATE
22
RSLC2
EVTHRES
+ 19
8
6
51
+
5
51 EBREAK
50
RDRAIN
16
21
MMED
DBREAK
MSTRO
+
17
18
11
DBODY
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
CIN
8
RSOURCE
7
LSOURCE
SOURCE
3
RLSOURCE
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 280e-3
RGATE 9 20 12.4
S1A
12
13
8
14
13
S2A
15
17
RBREAK
18
RLDRAIN 2 5 10
RLGATE 1 9 4.7
RLSOURCE 3 7 4.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 190e-3
S1B
13
CA
+
EGS
6
8
S2B
CB
EDS
+
5
8
14
IT
RVTEMP
19
VBAT
+
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
6 12 13 8 S1AMOD
S1B
13 12 13 8 S1BMOD
S2A
6 15 14 13 S2AMOD
S2B
13 15 14 13 S2BMOD
8
RVTHRES
22
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*20),2.5))}
.MODEL DBODYMOD D (IS = 7.7e-11 N=1.277 RS = 1e-3 TRS1 = 2.8e-1 TRS2 = 3e-4 XTI=0 IKF=0.5 CJO = 3.9e-11
TT=33e-9 M = 0.50)
.MODEL DBREAKMOD D (RS = 5.3e-1 TRS1 = 5.5e-3 TRS2 = -9e-5)
.MODEL DPLCAPMOD D (CJO = 0.5e-10 IS = 1e-30 N = 10 M = 0.55)
.MODEL MMEDMOD PMOS (VTO = -1.17 KP = 0.6 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 12.4)
.MODEL MSTROMOD PMOS (VTO = -1.45 KP = 1.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD PMOS (VTO = -0.99 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 124 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 5.5e-4 TC2 = -1e-7)
.MODEL RDRAINMOD RES (TC1 = 2.8e-3 TC2 = 4.9e-6)
.MODEL RSLCMOD RES (TC1 = 3.7e-3 TC2 = 7.8e-6)
.MODEL RSOURCEMOD RES (TC1 = 3e-3 TC2 = 5.2e-6)
.MODEL RVTHRESMOD RES (TC1 = 9e-4 TC2 = 3e-7)
.MODEL RVTEMPMOD RES (TC1 = -5.5e-4 TC2 = -1e-9)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = 0.5 VOFF= 0.2)
VON = 0.2 VOFF= 0.5)
VON = 0.4 VOFF= -0.1)
VON = -0.1 VOFF= 0.4)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
?2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
相关PDF资料 |
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| FDG6318P | MOSFET P-CH DUAL 20V SC70-6 |
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| FDG6322C_D87Z | MOSFET N/P-CH DUAL 25V SC70-6 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6320C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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