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参数资料
| 型号： | FDG6318PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 780 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.62nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 85.4pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
SPICE Thermal Model
REV January 2003
FDG6318PZ_JA Junction Ambient
Copper Area= 1sq.in
CTHERM1 Junction c2 0.17e-4
CTHERM2 c2 c3 2.7e-4
CTHERM3 c3 c4 5.5e-4
CTHERM4 c4 c5 1.4e-3
CTHERM5 c5 c6 2.2e-3
CTHERM6 c6 c7 2.6e-3
CTHERM7 c7 c8 6.6e-3
CTHERM8 c8 Ambient 0.29
RTHERM1 Junction c2 11.2
RTHERM2 c2 c3 11.5
RTHERM3 c3 c4 12.5
RTHERM4 c4 c5 27
RTHERM5 c5 c6 81
RTHERM6 c6 c7 88
RTHERM1
RTHERM2
RTHERM3
th
8
7
JUNCTION
CTHERM1
CTHERM2
CTHERM3
RTHERM7 c7 c8 92
RTHERM8 c8 Ambient 93
SABER Thermal Model
SABER thermal model FDG6318PZ
RTHERM4
6
5
CTHERM4
Copper Area= 1sq.in
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th c2 = 0.17e-4
ctherm.ctherm2 c2 c3 = 2.7e-4
ctherm.ctherm3 c3 c4 = 5.5e-4
ctherm.ctherm4 c4 c5 = 1.4e-3
ctherm.ctherm5 c5 c6 = 2.2e-3
ctherm.ctherm6 c6 c7 = 2.6e-3
ctherm.ctherm7 c7 c8 = 6.6e-3
ctherm.ctherm8 c8 tl = 0.29
rtherm.rtherm1 th c2 = 11.2
rtherm.rtherm2 c2 c3 = 11.5
rtherm.rtherm3 c3 c4 = 12.5
rtherm.rtherm4 c4 c5 = 27
rtherm.rtherm5 c5 c6 = 81
rtherm.rtherm6 c6 c7 = 88
rtherm.rtherm7 c7 c8 = 92
rtherm.rtherm8 c8 tl = 93
}
RTHERM5
RTHERM6
RTHERM7
RTHERM8
4
3
2
CTHERM5
CTHERM6
CTHERM7
CTHERM8
?2003 Fairchild Semiconductor Corporation
tl
AMBIENT
FDG6318PZ Rev.B
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6318P | MOSFET P-CH DUAL 20V SC70-6 |
| FDG6320C_D87Z | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6321C | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6322C_D87Z | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6332C_F085 | MOSFET N/P-CH 20V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6320C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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