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| 型号： | FDG6321C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH DUAL 25V SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | MOSFET SC70-6 Pkg |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA，410mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 50pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDG6321CDKR |
November 1998
FDG6321C
Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage
applications as a replacement for bipolar digital transistors and
small signal MOSFETS. Since bias resistors are not required,
this dual digital FET can replace several different digital
transistors, with different bias resistor values.
Features
N-Ch 0.50 A, 25 V, R DS(ON) = 0.45 ? @ V GS = 4.5V.
R DS(ON) = 0.60 ? @ V GS = 2.7 V.
P-Ch -0.41 A, -25 V,R DS(ON) = 1.1 ? @ V GS = -4.5V.
R DS(ON) = 1.5 ? @ V GS = -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits(V GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
G2
SOT-23
S2
SuperSOT TM -6
SOT-8
1
SO-8
6
SOIC-14
D1
.21
2
5
SC70-6
S1
D2
G1
3
4
Absolute Maximum Ratings
T A = 25 o C unless otherwise noted
Symbol
V DS S
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
N-Channel
25
8
P-Channel
-25
-8
Units
V
V
I D
Drain Current
- Continuous
0.5
-0.41
A
- Pulsed
1.5
-1.2
P D
Maximum Power Dissipation
(Note 1)
0.3
W
T J ,T STG
ESD
Operating and Storage Temperature Ranger
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
? 1998 Fairchild Semiconductor Corporation
FDG6321C Rev. D
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6322C_D87Z | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6332C_F085 | MOSFET N/P-CH 20V SC70-6 |
| FDG6332C | MOSFET N/P-CH 20V SC70-6 |
| FDG6335N | MOSFET N-CH 20V 700MA SOT-363 |
| FDG8842CZ | MOSFET N/P-CH 30V/-25V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDG6321C_Q | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6322C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6322C_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6322C_D87Z | 功能描述:MOSFET Dual N&P Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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