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参数资料
| 型号： | FDG6318PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 780 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.62nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 85.4pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
Typical Characteristic (Continued) T A = 25°C unless otherwise noted
10
3
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1
100 μ s
2
V DD = -10V
T J = 150 o C
T J = 25 o C
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
10ms
1
T J = -55 o C
0.1
0.05
SINGLE PULSE
T J = MAX RATED
T A = 25 o C
0
1
10
30
0
1
2
3
4
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
3
1.0
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T A = 25 o C
V GS = -4.5V
0.9
I D = -0.5 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2
0.8
1
0
V GS = -2.5V
V GS = -2V
0.7
0.6
0.5
I D = -0.1A
0
0.5
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
1.50
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MA X
1.25
1.00
V GS = -4.5V, I D = -0.5A
0.75
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.2
V GS = V DS , I D = 250 μ A
1.0
0.8
0.6
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
T J , JUNCTION TEMPERATURE ( o C)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
?2003 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
FDG6318PZ Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6318P | MOSFET P-CH DUAL 20V SC70-6 |
| FDG6320C_D87Z | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6321C | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6322C_D87Z | MOSFET N/P-CH DUAL 25V SC70-6 |
| FDG6332C_F085 | MOSFET N/P-CH 20V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6320C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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