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参数资料
| 型号： | FDG6322C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC FET DGTL N/P-CHAN DUAL SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA，410mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 220mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 9.5pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1216 (CN2011-ZH PDF) |
| 其它名称： | FDG6322CDKR |
September 2013
FDG6322C
Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
bipolar digital transistors and small signal MOSFETs. Since
bias resistors are not required, this dual digital FET can
replace several different digital transistors, with different bias
resistor values.
Features
N-Ch 0.22 A, 25 V, R DS(ON) = 4.0 ? @ V GS = 4.5 V,
R DS(ON) = 5.0 ? @ V GS = 2.7 V.
P-Ch -0.41 A,-25V, R DS(ON) = 1.1 ? @ V GS = -4.5V,
R DS(ON) = 1.5 ? @ V GS = -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
SOT-23
SuperSOT TM -6
SOT-8
SO-8
SOIC-14
D1
G2
S2
1
Q1
6
2
5
SC70-6
pin 1
S1
G1
D2
3
Q2
4
Mark: .22
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DS S
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
N-Channel
25
8
P-Channel
-25
-8
Units
V
V
I D
Drain Current
- Continuous
0.22
-0.41
A
- Pulsed
0.65
-1.2
P D
Maximum Power Dissipation
(Note 1)
0.3
W
T J ,T STG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note1)
415
°C/W
? 2012 Fa irchild Semiconductor Corporation
FDG6322C Rev .F3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6322C_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6322C_D87Z | 功能描述:MOSFET Dual N&P Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6322C_NL | 制造商:Freescale Semiconductor 功能描述: |
| FDG6322C_Q | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6323 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated Load Switch |
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