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| 型号： | FDG6342L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IC LOAD SWITCH INTEGRATED SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 150 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 1.5A |
| 输入电压： | 2.5 V ~ 8 V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1216 (CN2011-ZH PDF) |
| 其它名称： | FDG6342LDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV IN
I Load
I FL
I RL
V IN Breakdown Voltage
Zero Gate Voltage Drain Current
Leakage Current, Forward
Leakage Current, Reverse
I D = -250 μ A, V ON/OFF = 0V
V IN = -6.4V, V ON/OFF = 0V
V IN = 8V, V ON/OFF = 0V
V IN = –8V, V ON/OFF = 0V
8
–1
10
–10
V
μ A
μ A
μ A
On Characteristics (note 2)
V ON/OFF(th)
Gate Threshold Voltage
V IN = V ON/OFF , I D = -250 μ A
0.65
0.8
1.5
V
V IN = 4.5V, I D = –1.5A
125
150
r DS(on)
Static Drain to Source On Resistance (Q2)
V IN = 2.5V, I D = –1.3A
V IN = 1.8V, I D = –1.1A
150
200
195
280
m ?
V IN = 1.5V, I D = –0.9A
250
480
Static Drain to Source On Resistance (Q1)
V IN = 4.5V, I D = 0.4A
V IN = 2.7V, I D = 0.2A
2.6
3.3
4.0
5.0
?
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain to Source Diode Forward Current
–0.25
V
V SD
Source to Drain Diode Forward Voltage
V ON/OFF = 0V, I S = –0.25A (Note 2)
–0.6
–1.2
V
NOTES:
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ JA is determined by
the user's board design.
a. 350°C/W when mounted on a
1 in 2 pad of 2 oz copper .
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
FDG6342LLoad Switch Application circuit
b. 415°C/W when mounted on
a minimum pad of 2 oz copper.
IN
Q2
OUT
C1
R1
Q1
ON/OFF
LOAD
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030
?2008 Fairchild Semiconductor Corporation
FDG6342L Rev.B1
2
www.fairchildsemi.com
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