参数资料
型号: FDG6342L
厂商: Fairchild Semiconductor
文件页数: 3/4页
文件大小: 0K
描述: IC LOAD SWITCH INTEGRATED SC70-6
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
类型: 高端开关
输出数: 1
Rds(开): 150 毫欧
内部开关:
电流限制: 1.5A
输入电压: 2.5 V ~ 8 V
工作温度: -55°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 标准包装
产品目录页面: 1216 (CN2011-ZH PDF)
其它名称: FDG6342LDKR
Typical Characteristics T J = 25°C unless otherwise noted
0.5
V IN = -1.5V
V ON/OFF = 1.5-8V
0.5
V IN = -1.8V
V ON/OFF = 1.5-8V
0.4
PW = 300 μ s, D < 2%
0.4
PW = 300 μ s, D < 2%
0.3
0.2
0.1
T J = 125 o C
T J = 25 o C
0.3
0.2
0.1
T J = 125 o C
T J = 25 o C
0.0
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-IL, ( A )
Figure 1. Conduction Voltage Drop
Variation with Load Current.
0.5
V IN = -2.5V
V ON/OFF = 1.5-8V
0.5
-IL, ( A )
Figure 2. Conduction Voltage Drop
Variation with Load Current.
V IN = -4.5V
V ON/OFF = 1.5-8V
0.4
PW = 300 μ s, D < 2%
= 125 o C
T J
0.4
PW = 300 μ s, D < 2%
T J = 125 o C
0.3
0.2
0.1
T J = 25 o C
0.3
0.2
0.1
T J = 25 o C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.6
-IL, ( A )
Figure 3. Conduction Voltage Drop
Variation with Load Current.
I L = -1.3A
0.6
-IL, ( A )
Figure 4. Conduction Voltage Drop
Variation with Load Current.
I L = -1.5A
0.5
0.4
0.3
0.2
T J = 125 o C
V ON/OFF = 1.5-8V
PW = 300 μ s, D < 2%
0.5
0.4
0.3
0.2
T J = 125 o C
V ON/OFF = 1.5-8V
PW = 300 μ s, D < 2%
0.1
T J =
25 o C
0.1
T J = 25 o C
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-V IN , INPUT VOLTAGE ( V )
Figure 5. On-Resistance Variation
With Input Voltage
-V IN , INPUT VOLTAGE ( V )
Figure 6. On-Resistance Variation
With Input Voltage
?2008 Fairchild Semiconductor Corporation
FDG6342L Rev.B1
3
www.fairchildsemi.com
相关PDF资料
PDF描述
FDMF6704A MODULE DRMOS XS 40-MLP
FDMF6704 IC DRMOS MODULE 1000KHZ 40-MLP
FDMF6705B MOSFET DRMOS 40A 300KHZ 40PQFN
FDMF6705V MODULE DRMOS 40A 1000KHZ 40PQFN
FDMF6705 MODULE DRMOS HI PERF HF POWER66
相关代理商/技术参数
参数描述
FDG8842CZ 功能描述:MOSFET Q1:30V/Q2: -25V Cmpl PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDG8850NZ 功能描述:MOSFET 30V Dual N-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDG901 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Slew Rate Control Driver IC for P-Channel MOSFETs
FDG901D 功能描述:开关变换器、稳压器与控制器 Control Driver IC P-Ch Slew Rate RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel
FDG901D_Q 功能描述:电源开关 IC - 配电 Control Driver IC P-Ch Slew Rate RoHS:否 制造商:Exar 输出端数量:1 开启电阻(最大值):85 mOhms 开启时间(最大值):400 us 关闭时间(最大值):20 us 工作电源电压:3.2 V to 6.5 V 电源电流(最大值): 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5