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| 型号： | FDH047AN08A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 80A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.7 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 138nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6600pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | FDH047AN08A0-ND FDH047AN08A0FS |
October 2013
FDP047AN08A0 / FDH047AN08A0
N-Channel PowerTrench ? MOSFET
75 V, 80 A, 4.7 m Ω
Features
? R DS(ON) = 4.0 m ? (Typ.), V GS = 10 V, I D = 80 A
? Q g (tot) = 92 nC (Typ.), V GS = 10V
? Low Miller Charge
Applications
? Synchronous Rectification for ATX / Server / Telecom PS U
? Battery Protection Circui t
? Motor Drives and Uninterruptible Power Supplie s
? Low Q rr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82684
D
GD
S
TO-220
G
D
S
TO-247
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
C
Symbol
V DSS
V GS
I D
E AS
P D
T J , T STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T C < 144 o C, V GS = 10V)
Continuous (T C = 25 o C, V GS = 10V, with R θ JA = 62 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
FDP047AN08A0
FDH047AN08A0
75
± 20
80
15
Figure 4
475
310
2.0
-55 to 175
Unit
V
V
A
A
A
mJ
W
W / o C
o
Thermal Characteristics
C/W
C/W
R θ JC
R θ JA
R θ JA
Thermal Resistance Junction to Case, Max. TO-220, TO-247
Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2)
Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2)
0. 48
62
30
o C/W
o
o
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
1
www.fairchildsemi.com
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