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参数资料
| 型号： | FDH047AN08A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 80A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.7 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 138nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6600pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | FDH047AN08A0-ND FDH047AN08A0FS |
PSPICE Electrical Model
.SUBCKT FDP047AN08A0 2 1 3 ;
CA 12 8 1.5e-9
rev March 2002
CB 15 14 1.5e-9
CIN 6 8 6.4e-9
DPLCAP
5
LDRAIN
DRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 82.3
10
RSLC2
RSLC1
51
5
ESLC
51
DBREAK
11
RLDRAIN
2
9
20
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.81e-9
LSOURCE 3 7 4.63e-9
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
CIN
50
RDRAIN
16
21
MMED
MSTRO
8
+
17
EBREAK 18
-
MWEAK
7
DBODY
LSOURCE
SOURCE
3
RSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
12
S1A
13
8
S2A
14
13
15
17
RBREAK
RLSOURCE
18
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9e-4
RGATE 9 20 1.36
RLDRAIN 2 5 10
RLGATE 1 9 48.1
RLSOURCE 3 7 46.3
RSLC1 5 51 RSLCMOD 1e-6
CA
S1B
13
+
EGS
-
6
8
S2B
CB
+
EDS
-
5
8
14
8
IT
RVTHRES
RVTEMP
19
-
VBAT
+
22
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.3e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))}
.MODEL DBODYMOD D (IS = 2.4e-11 N = 1.04 RS = 1.76e-3 TRS1 = 2.7e-3 TRS2 = 2e-7 XTI=3.9 CJO = 4.35e-9 TT = 1e-8
M = 5.4e-1)
.MODEL DBREAKMOD D (RS = 1.5e-1 TRS1 = 1e-3 TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 1.35e-9 IS = 1e-30 N = 10 M = 0.53)
.MODEL MMEDMOD NMOS (VTO = 3.7 KP = 9 IS =1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36)
.MODEL MSTROMOD NMOS (VTO = 4.4 KP = 250 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 3.05 KP = 0.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36e1 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = -9e-7)
.MODEL RDRAINMOD RES (TC1 = 1.9e-2 TC2 = 4e-5)
.MODEL RSLCMOD RES (TC1 = 1.3e-3 TC2 = 1e-5)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -6e-3 TC2 = -1.9e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -4.0 VOFF= -1.5)
VON = -1.5 VOFF= -4.0)
VON = -1.0 VOFF= 0.5)
VON = 0.5 VOFF= -1.0)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
7
www.fairchildsemi.com
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