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| 型号： | FDMC7570S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 40A POWER33 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 27A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 毫欧 @ 27A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 68nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4410pF @ 13V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power33 |
| 供应商设备封装： | Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDMC7570SDKR |
December 2009
FDMC7570S
N-Channel Power Trench ? SyncFET TM
25 V, 40 A, 2 m ?
Features
Max r DS(on) = 2 m ? at V GS = 10 V, I D = 27 A
Max r DS(on) = 2.9 m ? at V GS = 4.5 V, I D = 21.5 A
Advanced Package and Combination for low r DS(on) and high
efficiency
SyncFET Schottky Body Diode
100% UIL Tested
RoHS Compliant
General Description
The FDMC7570S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top
Bottom
S
Pin 1
S
S
G
D
D
5
6
4 G
3 S
D
D
D
D
D
D
7
8
2
1
S
S
Power 33
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
25
Units
V
V GS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
(Note 4)
±20
40
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
132
27
A
-Pulsed
120
E AS
Single Pulse Avalanche Energy
(Note 3)
144
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
59
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
2.1
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7570S
Device
FDMC7570S
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMC7570S Rev.C
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMC7572S | MOSFET N-CH 25V 40A POWER33 |
| FDMC7582 | MOSFET N-CH 25V 16.7A 8-PQFN |
| FDMC7660DC | MOSFET N-CH 30V 40A POWER33 |
| FDMC7660S | MOSFET N-CH 30V 8-PQFN |
| FDMC7660 | MOSFET N-CH 30V 20A 8-PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC7572S | 功能描述:MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7582 | 功能描述:MOSFET PT5 100V/20V NCH POWERTRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7660 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7660 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor |
| FDMC7660_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30 V, 20 A, 2.2 m?? |
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