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| 型号： | FDMC7660 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 20A 8-PQFN |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 86nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4830pF @ 15V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | 8-PQFN（3.3X3.3），Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDMC7660DKR |
June 2012
FDMC7660
N-Channel PowerTrench ? MOSFET
30 V, 20 A, 2.2 m Ω
Features
Max r DS(on) = 2.2 m Ω at V GS = 10 V, I D = 20 A
Max r DS(on) = 3.3 m Ω at V GS = 4.5 V, I D = 18 A
High performance technology for extremely low r DS(on)
Termination is Lead-free and RoHS Compliant
Top
Bottom
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
S
Pin 1
S
S
G
S
S
D
D
S
D
D
D
D
D
G
D
Power 33
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
V GS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
(Note 4)
±20
40
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
100
20
A
-Pulsed
200
E AS
Single Pulse Avalanche Energy
(Note 3)
200
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
41
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7660
Device
FDMC7660
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC7660 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor |
| FDMC7660_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30 V, 20 A, 2.2 m?? |
| FDMC7660DC | 功能描述:MOSFET 30V N-Chan Dual Cool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7660S | 功能描述:MOSFET 30V N-Chan SyncFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7664 | 功能描述:MOSFET N-Chan 30/20V PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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