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| 型号： | FDMC7672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8-MLP |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.7 毫欧 @ 16.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 57nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3890pF @ 15V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP |
| 供应商设备封装： | 8-MLP（3.3x3.3） |
| 包装： | 管件 |
December 2013
FDMC7672
N-Channel Power Trench ? MOSFET
30 V, 16.9 A, 5.7 m Ω
Features
Max r DS(on) = 5.7 m Ω at V GS = 10 V, I D = 16.9 A
Max r DS(on) = 7.0 m Ω at V GS = 4.5 V, I D = 15.0 A
High performance technology for extremely low r DS(on)
Termination is Lead-free and RoHS Compliant
Top
Bottom
Pin 1
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench ? process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
S
D
S
S
S
G
S
D
S
D
D
D
D
D
G
D
MLP 3.3x3.3
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
30
±20
20
Units
V
V
I D
-Continuous
T A = 25 °C
(Note 1a)
16.9
A
-Pulsed
50
E AS
Single Pulse Avalanche Energy
(Note 3)
144
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
33
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.7
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7672
Device
FDMC7672
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C4
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC7672_F065 | 功能描述:MOSFET PT7, NCH, 30/20V in MLP 3.3x3. RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7672_F073 | 功能描述:MOSFET 30V N-CHAN 16.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7672S | 功能描述:MOSFET 30V/20A N-Chan PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7672S_F125 | 功能描述:MOSFET 30V N-CHAN 14.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC7672S_F126 | 功能描述:MOSFET 30V N-CHAN 14.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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